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preliminary data sheet 1 of 11 rev. 01, 2008-06-15 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! preliminary PTFA181001GL ptfa181001hl confidential, limited internal distribution description the PTFA181001GL and PTFA181001GL are 100-watt ldmos fets designed for edge and wcdma power amplifier applications in the 1805 to 1880 mhz band. features include input and output matching, and thermally-enhanced open-cavity packages with copper flanges. manufactured with infineon's advanced ldmos process, these devices provide excellent thermal performance and superior reliability. ptf a181001gl* package pg -63248-2 thermally-enhanced high power rf ldmos fets 100 w, 1805 ? 1880 mhz two-carrier wcdma drive-up v dd = 28 v, i dq = 750 ma, ? = 1880 mhz, 3gpp wcdma signal, par = 8 db, 10 mhz carrier spacing -55 -50 -45 -40 -35 -30 34 36 38 40 42 44 46 average output power (dbm) im3 (dbc), acpr (dbc) 5 10 15 20 25 30 35 drain efficiency (%) acpr efficiency im3 rf characteristics edge measurements ( not subject to production test?verified by design/characterization in infineon test fixture) v dd = 28 v, i dq = 750 ma, p out = 45 w (avg), ? = 1879.8 mhz characteristic symbol min typ max unit error vector magnitude rms evm ? 1.8 ? % modulation spectrum @ 400 khz acpr ? ?61 ? dbc modulation spectrum @ 600 khz acpr ? ?73 ? dbc gain g ps ? 16.5 ? db drain efficiency h d ? 36 ? % ptfa181001hl* package pg-64248-2 features ? thermally-enhanced, plastic open-cavity (epoc?) packages with copper flanges, pb-free and rohs compliant ? broadband internal matching ? typical edge performance at 1879.8 mhz, 28 v - average output power = 45 w - linear gain = 16.5 db - efficiency = 36% - evm rms = 1.8% ? typical cw performance, 1880 mhz, 28 v - output power at p?1db = 120 w - gain 15.5 db - efficiency = 52% ? integrated esd protection: human body model, class 2 (minimum) ? excellent thermal stability ? capable of handling 10:1 vswr @ 28 v, 100?w?(cw) output power *see infineon distributor for future availability.
preliminary PTFA181001GL ptfa181001hl confidential, limited internal distribution preliminary data sheet 2 of 11 rev. 01, 2008-06-15 rf characteristics (cont.) two-tone measurements (tested in infineon test fixture) v dd = 28 v, i dq = 750 ma, p out = 100 w pep, ? = 1850 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps ? 16.5 ? db drain efficiency h d ? 41 ? % intermodulation distortion imd ? ?30 ? dbc dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a v ds = 63 v, v gs = 0 v i dss ? ? 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.085 ? w operating gate voltage v ds = 28 v, i d = 750 ma v gs 2.0 2.5 3.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation p d tbd w above 25c derate by tbd w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c, 100 w cw) r q jc tbd c/w ordering information type and version package type package description shipping marking PTFA181001GL* v1 pg-63248-2 thermally-enhanced, plastic tray PTFA181001GL open-cavity, slotted flange, single-ended ptfa181001hl* v1 pg-64248-2 thermally-enhanced, plastic tray ptfa181001hl open-cavity, earless flange, single-ended *see infineon distributor for future availability.
preliminary PTFA181001GL ptfa181001hl confidential, limited internal distribution preliminary data sheet 3 of 11 rev. 01, 2008-06-15 edge evm and modulation spectrum vs. quiescent current v dd = 28v, ? = 1879.8 mhz, p out = 46.5 dbm 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0.65 0.70 0.75 0.80 0.85 0.90 quiescent current (a) evm rms (average %) . -90 -80 -70 -60 -50 -40 -30 -20 -10 modulation spectrum (dbc) evm 400 khz 600 khz edge modulation spectrum performance v dd = 28 v, i dq = 750 ma, ? = 1879.8 mhz -100 -90 -80 -70 -60 -50 -40 -30 -20 37 39 41 43 45 47 49 output power (dbm) modulation spectrum (db) 5 10 15 20 25 30 35 40 45 drain efficiency (%) efficiency 400 khz 600 khz typical performance (data taken in a production test fixture) edge evm performance v dd = 28 v, i dq = 750 ma, ? = 1879.8 mhz 0 1 2 3 4 5 6 7 8 37 39 41 43 45 47 49 output power (dbm) evm rms (average %) . 5 10 15 20 25 30 35 40 45 drain efficiency (%) evm efficiency intermodulation distortion vs. output power (as measured in a broadband circuit) v dd = 28 v, i dq = 750 ma, ? 1 =1879 mhz, ? 2 = 1880 mhz -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 37 39 41 43 45 47 49 output power, avg. (dbm) imd (dbc) 3rd order 7th 5th
preliminary PTFA181001GL ptfa181001hl confidential, limited internal distribution preliminary data sheet 4 of 11 rev. 01, 2008-06-15 im3 vs. output power at selected biases v dd = 28 v, ? 1 = 1879, ? 2 = 1880 mhz -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 37 39 41 43 45 47 49 output power, avg. (dbm) imd (dbc) 375 ma 1125 ma 750 ma broadband cw performance (at p-1db) v dd = 28 v, i dq = 750 m 14 15 16 17 18 19 1805 1818 1831 1844 1857 1870 1883 frequency (mhz) gain (db) 35 40 45 50 55 60 efficiency (%), output power (dbm) output power efficiency gain typical performance (cont.) cw broadband performance v dd = 28 v, i dq =750 ma, p out = 47 dbm 20 25 30 35 40 45 50 55 1805 1818 1831 1844 1857 1870 1883 frequency (mhz) gain (db), efficiency (%) -30 -20 -10 0 10 20 30 40 return loss (db) gain return loss efficiency power sweep v dd = 28 v, ? = 1880 mhz 14.0 14.5 15.0 15.5 16.0 16.5 17.0 36 38 40 42 44 46 48 50 52 output power (dbm) power gain (db) i dq = 1125 ma i dq = 375 ma i dq = 750 ma
preliminary PTFA181001GL ptfa181001hl confidential, limited internal distribution preliminary data sheet 5 of 11 rev. 01, 2008-06-16 is-95 cdma performance v dd = 28 v, i dq = 750 ma, ? = 1880 mhz 0 5 10 15 20 25 30 35 40 33 35 37 39 41 43 45 47 output power (dbm), avg. drain efficiency (%) -80 -70 -60 -50 -40 -30 -20 -10 adj. ch. power ratio (dbc) efficiency acp f c ? 0.75 mhz acpr f c + 1.98 mhz t case = 25c t case = 90c gain & efficiency vs. output power v dd = 28 v, i dq = 750 ma, ? = 1880 mhz 12 13 14 15 16 17 18 36 38 40 42 44 46 48 50 52 output power (dbm) gain (db) 5 15 25 35 45 55 65 drain efficiency (%) efficiency gain typical performance (cont.) output power (at 1 db compression) vs. supply voltage i dq = 750 ma, ? =1880 mhz 49.5 50.0 50.5 51.0 51.5 52.0 24 26 28 30 32 supply voltage (v) output power (dbm)
preliminary data sheet 6 of 11 rev. 01, 2008-06-16 preliminary PTFA181001GL ptfa181001hl confidential, limited internal distribution broadband circuit impedance z source z load g s d frequency z source w z load w mhz r jx r jx 1805 4.62 ?6.23 1.50 ?3.87 1830 4.18 ?6.10 1.51 ?3.46 1850 4.20 ?6.13 1.50 ?3.16 1860 4.58 ?6.20 1.49 ?3.00 1880 4.42 ?6.36 1.48 ?2.62 see next page for reference circuit
preliminary data sheet 7 of 11 rev. 01, 2008-06-15 preliminary PTFA181001GL ptfa181001hl confidential, limited internal distribution reference circuit reference circuit schematic for ? = 1880 mhz circuit assembly information dut PTFA181001GL or ptfa181001hl ldmos transistor pcb 0.76 mm [.030"] thick, e r = 4.5 rogers tmm4 2 oz. copper microstrip electrical characteristics at 1880 mhz 1 dimensions: l x w (mm) dimensions: l x w (in.) l 1 0.314 l , 50.0 w 27.43 x 1.37 1.080 x 0.054 l 2 0.172 l , 38.0 w 14.73 x 2.16 0.580 x 0.085 l 3 0.016 l , 11.4 w 1.27 x 10.16 0.050 x 0.400 l 4 0.024 l , 60.0 w 2.24 x 0.99 0.088 x 0.039 l 5 0.218 l , 60.0 w 19.33 x 0.99 0.761 x 0.039 l 6 0.019 l , 6.9 w 1.52 x 17.78 0.060 x 0.700 l 7 0.044 l , 6.9 w 3.43 x 17.78 0.135 x 0.700 l 8, l 9 0.233 l , 53.0 w 20.45 x 1.24 0.805 x 0.049 l 10 0.039 l , 4.9 w 3.10 x 25.65 0.122 x 1.010 l 11 (taper) 0.037 l , 4.9 w / 10.3 w 2.92 x 25.65 / 11.43 0.115 x 1.010 / 0.450 l 12 (taper) 0.033 l , 10.3 w / 41.0 w 2.79 x 11.43 / 1.91 0.110 x 0.450 / 0.075 l 13 0.069 l , 41.0 w 6.35 x 1.91 0.250 x 0.075 l 14 0.038 l , 41.0 w 3.25 x 1.91 0.128 x 0.075 l 15 0.331 l , 50.0 w 28.98 x 1.37 1.141 x 0.054 1 electrical characteristics are rounded. rf_in a181001ef_sch_06-04-18 rf_out r3 2k v c3 0.001f c2 0.001f q1 bcp56 r2 1.3k v qq1 lm7805 c1 0.001f v dd r5 10 v r4 2k v r1 1.2k v c9 10pf l 1 r9 10 v dut l 5 c6 1f c5 0.1f c4 10f 35v c7 0.01f r8 2k v c8 10pf r7 5.1k v c10 0.6pf l 2 l 3 l 6 l 7 l 4 r6 5.1k v c22 1.5pf c21 1.5pf c24 10pf c23 0.6pf l 10 l 11 l 12 l 13 l 14 l 8 l 9 l 15 v dd l1 c11 1f c13 1f c12 10pf c14 10f 50v c15 10f 50v c16 1f c18 1f c17 10pf c19 10f 50v c20 10f 50v l2
preliminary data sheet 8 of 11 rev. 01, 2008-06-15 preliminary PTFA181001GL ptfa181001hl confidential, limited internal distribution reference circuit assembly diagram* (not to scale) reference circuit (cont.) component description suggested manufacturer p/n or comment c1, c2, c3 capacitor, 0.001 f digi-key pcc1772ct-nd c4 tantalum capacitor, 10 f, 35 v digi-key 399-1655-2-nd c5 capacitor, 0.1 f digi-key pcc104bct-nd c6, c11, c13, c16, c18 capacitor, 1.0 f atc 920c105 c7 capacitor, 0.01 f atc 200b 103 c8, c9, c12, c17, c24 ceramic capacitor, 10 pf atc 100b 100 c10, c23 ceramic capacitor, 0.6 pf atc 100b 0r6 c14, c15, c19, c20 tantalum capacitor, 10 f, 50 v garrett electronics tpse106k050r0400 c21, c22 ceramic capacitor, 1.5 pf atc 100b 1r5 l1, l2 ferrite, 8.9 mm elna magnetics bds 4.6/3/8.9-4s2 q1 transistor infinion technologies bcp56 qq1 voltage regulator national semiconductor lm7805 r1 chip resistor 1.2 k-ohms digi-key p1.2kgct-nd r2 chip resistor 1.3 k-ohms digi-key p1.3kgct-nd r3, r8 chip resistor 2 k-ohms digi-key p2kect-nd r4 potentiometer 2 k-ohms digi-key 3224w-202etr-nd r5, r9 chip resistor 10 ohms digi-key p10ect-nd r6, r7 chip resistor 5.1 k-ohms digi-key p5.1kect-nd *gerber files for this circuit available on request r4 q1 qq1 c3 c1 r2 c2 r1 r5 r3 c5 r8 c9 c10 r6 r7 c6 c4 r9 c8 c7 c16 c17 c18 c19 c20 c13 c14 c15 c11 c12 c24 c23 c21 c22 l2 l1 a181001_01 v dd v dd v dd a181001ef_assy a181001ef_dtl r4 q1 qq1 c3 c1 r2 c2 r1 r5 r3 c5 r8 r6 r7 c6 c4 c8 c7 v dd
preliminary data sheet 9 of 11 rev. 01, 2008-06-15 preliminary PTFA181001GL ptfa181001hl confidential, limited internal distribution package outline specifications package pg-63248-2 diagram notes?unless otherwise specified: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. pins: d = drain, s = source, g = gate. 3. lead thickness: 0.10 + 0.051/?0.025 mm [.004 +0.002/?0.001 inch]. 4. gold plating thickness: < 0.254 micron [< 10 microinch] 5. tabs may protrude 0.13 [.005] max from body. 6. all tolerances: tbd. 7. primary dimensions are mm. alternate dimensions are inches. c l 4.830.51 [.190.020] c l pg-68248-2-g_po_5-9-08 20.27 [.798] 34.04 [1.340] 3x r0.51 +1.14 ?0.25 3.63 +0.25 ?0.13 c l 0.064 (.0025) ?a? [r.020 ] +.045 ?.010 45 x 2.72 [45 x .107] 45 x 1.78 [45 x .070] 5 2x r1.63 [r.064] [.143 ] +.010 ?.005
preliminary data sheet 10 of 11 rev. 01, 2008-06-15 preliminary PTFA181001GL ptfa181001hl confidential, limited internal distribution package outline specifications (cont.) package pg-63248-2 diagram notes?unless otherwise specified: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. pins: d = drain, s = source, g = gate. 3. lead thickness: 0.10 + 0.051/?0.025 mm [.004 +0.002/?0.001 inch]. 4. gold plating thickness: < 0.254 micron [< 10 microinch] 5. all tolerances: tbd. 6. tabs may protrude 0.13 [.005] max from body. 7. primary dimensions are mm. alternate dimensions are inches. find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower pg-69248-2(g)_po_5-19-08
preliminary data sheet 11 of 11 rev. 01, 2008-06-15 preliminary PTFA181001GL/hl confidential, limited internal distribution revision history: 2008-06-15 preliminarydata sheet previous version: none page subjects (major changes since last revision) 3-24-06 updated sales tbl style for 2 lines. update imprint. change default date/s. 4-10 to 14 refine existing frames, new frames for final page. misc updates. goldmos ? is a registered trademark of infineon technologies ag. edition 2008-06-15 published by infineon technologies ag 81726 munich , germany ? 2008 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international

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